Plasma processes on sputtering, etching, plasma-enhanced CVD are sensitive to a lot of parameters coming from materials, pressure, gas flow rate, pumping, power and etc.
How to keep a plasma process running in a highly stable state with high performance becomes a serious topic.
OES tool is one of the powerful and efficient way to do diagnostics, analyses and process controlling in fast response time on most plasma applications. The costs of OES tool and its maintenance are much cheaper than others. Easy installation and friendly operation are advantages for quick entrance end users. It plays an essential role in the stabilization and optimization of plasma process.
Popular power supplies used in plasma processes have many kinds in different frequency ranges from DC, MF, RF, up to MW. In sputtering process, DC, MF, RF are 3 frequency ranges typically used. In order to provide good energy quality into plasma reaction, power supply’s stability and reliability are quite important and critical to meet process criteria.
Magnetron sputtering source (usually called “cathode”) plays an important role in sputtering applications. Target utilization and coating uniformity are two basic performance characteristics to be considered prior to the process chamber design. Power density related to cathode’s cooling capability (better cooling, higher energy density).
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