Plasma processes on sputtering, etching, plasma-enhanced CVD are sensitive to a lot of parameters coming from materials, pressure, gas flow rate, pumping, power and etc.

濺鍍、蝕刻、等離子體增強CVD的各種等離子體工藝對來自材料、壓力、氣體流速、泵送、功率等許多參數都極端敏感。

How to keep a plasma process running in a highly stable state with high performance becomes a serious topic.

如何保持等離子體工藝在高度穩定的狀態下運行，高性能成為一個嚴肅的話題。

OES tool is one of the powerful and efficient way to do diagnostics, analyses and process controlling in fast response time on most plasma applications. The costs of OES tool and its maintenance are much cheaper than others. Easy installation and friendly operation are advantages for quick entrance end users. It plays an essential role in the stabilization and optimization of plasma process.

OES工具是在大多數等離子體應用中快速響應時間內進行診斷，分析和製程控制的強大而有效的方法之一。OES工具及其維護的成本比其他工具便宜得多。易於安裝和友好的操作是快速進入最終用戶的優勢。它在等離子體製程的穩定和優化中起著至關重要的作用。

Popular power supplies used in plasma processes have many kinds in different frequency ranges from DC, MF, RF, up to MW. In sputtering process, DC, MF, RF are 3 frequency ranges typically used. In order to provide good energy quality into plasma reaction, power supply’s stability and reliability are quite important and critical to meet process criteria.

等離子工藝中經常使用的電源涵蓋多種不同頻率範圍，從直流、中頻、射頻到微波。在濺射製程中，直流、中頻、射頻是3個通常使用的頻率範圍。為了在等離子體反應中提供良好的能量品質，電源的穩定性和可靠性對於滿足工藝標準非常重要和關鍵。

Magnetron sputtering source (usually called “cathode”) plays an important role in sputtering applications. Target utilization and coating uniformity are two basic performance characteristics to be considered prior to the process chamber design. Power density related to cathode’s cooling capability (better cooling, higher energy density).

磁控濺射源（通常稱為”陰極”）在濺射應用中起著重要作用。靶材利用率和鍍層均勻性是製程腔體設計之前需要考慮的兩個基本性能特徵。功率密度與陰極的冷卻能力有關（更好的冷卻，更高的能量密度）。

Please go to our Products in our main MENU for more details.

請轉到我們主功能表中的產品以獲取更多詳細資訊。