In pulse and HIPIMS plasmas the degree of ionization is one main factor for layer density while layer stoichiometry is ruled by the plasma composition of metal and reactive gas species. Changing either parameter will affect also the other parameter. Thus controlling both, degree of ionization as well as stoichiometry simultaneously can only be realized by combining different measuring and controlling methods.
在脈衝和HIPIMS等離子體中，電離程度是層密度的一個主要因素，而層化學計量則由金屬和活性氣體的等離子體組成決定。更改任一參數也會影響另一個參數。因此，只有結合不同的測量和控制方法，才能同時控制電離度和化學計量。
The new Pulse and HIPIMS sensor of the EMICON SA system records the pulse current and pulse voltage curves and combines the evaluation of the electrical data with the data from the spectroscopic plasma monitoring technique in a single system. All sensor signals are evaluated in a common control algorithm realizing reliable and stable process control of both plasma parameters.
EMICON SA系統的新型脈衝和HIPIMS感測器記錄脈衝電流和脈衝電壓曲線，並將電學數據的評估與光譜等離子體監測技術的數據結合在一個系統中。所有感測器信號均採用通用控制演算法進行評估，實現對兩種等離子體參數的可靠和穩定的過程控制。
Independent control the ionization degree and reactive gas flow is now possible in reactive pulse and HIPIMS process and opens the door to many new applications in R&D and industry.
在反應式脈衝和HIPIMS製程中，現在可以獨立控制電離度和反應性氣體流量，並為研發和工業中的許多新應用打開了大門。