TiN反應式濺射鍍膜過程中可用的光譜參數

以下是TiN反應式濺射鍍膜過程中可參考的實際OES量測光譜：

Ti I 215.2 nm發射譜線：

此光譜顯示了Ti I 215.2 nm發射譜線的強度隨Ti流量率變化的情況。隨著Ti流量率的增加，發射譜線的強度也增加。這是因為電漿中存在更多Ti原子，導致Ti原子和電子之間的碰撞更多。這些碰撞激發Ti原子到更高的能級，當它們返回基態時，會發出215.2 nm的光。

Ti II 308.9 nm發射譜線：

此光譜顯示了Ti II 308.9 nm發射譜線的強度隨Ti流量率變化的情況。隨著Ti流量率的增加，發射譜線的強度也增加。這是因為電漿中存在更多離化的Ti原子，導致離化的Ti原子和電子之間的碰撞更多。這些碰撞激發離化的Ti原子到更高的能級，當它們返回基態時，會發出308.9 nm的光。

N₂ 337.1 nm發射譜線：

N₂ 337.1 nm emission line

此光譜顯示了N₂ 337.1 nm發射譜線的強度隨N流量率變化的情況。隨著N流量率的增加，發射譜線的強度也增加。這是因為電漿中存在更多N₂分子，導致N₂分子和電子之間的碰撞更多。這些碰撞激發N₂分子到更高的能級，當它們返回基態時，會發出337.1 nm的光。

N₂+ 391.4 nm發射譜線：

此光譜顯示了N₂+ 391.4 nm發射譜線的強度隨N流量率變化的情況。隨著N流量率的增加，發射譜線的強度也增加。這是因為電漿中存在更多N₂+離子，導致N₂+離子和電子之間的碰撞更多。這些碰撞激發N₂+離子到更高的能級，當它們返回基態時，會發出391.4 nm的光。

Ar I 763.5 nm發射譜線：

Ar I 763.5 nm emission line

此光譜顯示了Ar I 763.5 nm發射譜線的強度隨Ar流量率變化的情況。隨著Ar流量率的增加，發射譜線的強度也增加。這是因為電漿中存在更多Ar原子，導致Ar原子和電子之間的碰撞更多。這些碰撞激發Ar原子到更高的能級，當它們返回基態時，會發出763.5 nm的光。

Ar II 470.2 nm發射譜線：

Ar II 470.2 nm emission line
此光譜顯示了Ar II 470.2 nm發射譜線的強度隨Ar流量率變化的情況。隨著Ar流量率的增加，發射譜線的強度也增加。這是因為電漿中存在更多離化的Ar原子，導致離化的Ar原子和電子之間的碰撞更多。這些碰撞激發離化的Ar原子到更高的能級，當它們返回基態時，會發出470.2 nm的光。

Lab值與製程控制參數之間的關係

Lab值是國際照明委員會（CIE）定義的一種色彩空間，用於表示顏色的亮度、色度和飽和度。在反應式電漿磁控濺射鍍膜形成TiN薄膜時，Lab值可以反映薄膜的顏色。

Lab值的三個分量分別為：

  • L：亮度，表示顏色的明暗程度，取值範圍為0（黑色）至100（白色）。
  • a：綠-紅分量，表示顏色的綠色或紅色程度，正值表示紅色，負值表示綠色。
  • b：藍-黃分量，表示顏色的藍色或黃色程度，正值表示黃色，負值表示藍色。

在TiN薄膜中，Lab值的變化主要取決於以下製程控制參數：

  • 反應氣體的流量比例：反應氣體的流量比例會影響薄膜中Ti和N元素的比例，從而影響薄膜的顏色。例如，如果Ti流量過高，薄膜會呈現黃色；如果N流量過高，薄膜會呈現藍色。
  • 基板溫度：基板溫度會影響薄膜的晶體結構和形態，從而影響薄膜的顏色。例如，基板溫度越高，薄膜的晶體結構越趨於完美，顏色越接近白色。
  • 濺射功率：濺射功率會影響薄膜的厚度和密度，從而影響薄膜的顏色。例如，濺射功率越高，薄膜越厚，顏色越深。

如何透過製程控制的參數來達到Lab有穩定值的表現

為了使TiN合金薄膜的Lab值每批次的生產都要相同，至少Lab值的誤差必須維持在2%以內，可以透過以下方式來控制製程參數：

  • 使用流量控制器精確控制反應氣體的流量：可以使用流量控制器精確控制反應氣體的流量，以確保薄膜中Ti和N元素的比例穩定。
  • 使用溫度控制器精確控制基板溫度：可以使用溫度控制器精確控制基板溫度，以確保薄膜的晶體結構和形態穩定。
  • 使用功率控制器精確控制濺射功率：可以使用功率控制器精確控制濺射功率，以確保薄膜的厚度和密度穩定。

此外，還可以使用以下方法來進一步提高Lab值的穩定性：

  • 使用光譜儀監控電漿中的原子、分子和離子濃度：可以使用光譜儀監控電漿中的原子、分子和離子濃度，以確保反應過程的穩定性。
  • 使用薄膜厚度儀監控薄膜厚度：可以使用薄膜厚度儀監控薄膜厚度，以確保薄膜厚度的一致性。

通過以上措施，可以有效地控制TiN合金薄膜的Lab值，使其在不同批次之間保持穩定。

以下是一些具體的實施建議：

  • 建立一個詳細的製程控制規範，明確規定每一個製程參數的設定值和允許偏差範圍。
  • 定期對製程設備進行校準和維護，以確保其性能穩定。
  • 對每批次生產的薄膜進行Lab值測試，並記錄結果。
  • 分析Lab值測試結果，找出影響Lab值穩定性的因素，並採取相應的措施進行改進。

通過不斷地改進製程控制，可以進一步提高TiN合金薄膜的Lab值穩定性，使其更加符合生產要求。

Full control of reactive pulse and HIPIMS processes PLASUS EMICON SA latest sensor development 完全控制反應式脈衝和 HIPIMS 製程 PLASUS EMICON SA 最新開發的感測器

In pulse and HIPIMS plasmas the degree of ionization is one main factor for layer density while layer stoichiometry is ruled by the plasma composition of metal and reactive gas species. Changing either parameter will affect also the other parameter. Thus controlling both, degree of ionization as well as stoichiometry simultaneously can only be realized by combining different measuring and controlling methods.
在脈衝和HIPIMS等離子體中，電離程度是層密度的一個主要因素，而層化學計量則由金屬和活性氣體的等離子體組成決定。更改任一參數也會影響另一個參數。因此，只有結合不同的測量和控制方法，才能同時控制電離度和化學計量。

Sensor setup for bipolar HIPIMS application
Simultaneous control of reactive flow and degree of ionisation.

The new Pulse and HIPIMS sensor of the EMICON SA system records the pulse current and pulse voltage curves and combines the evaluation of the electrical data with the data from the spectroscopic plasma monitoring technique in a single system. All sensor signals are evaluated in a common control algorithm realizing reliable and stable process control of both plasma parameters.
EMICON SA系統的新型脈衝和HIPIMS感測器記錄脈衝電流和脈衝電壓曲線，並將電學數據的評估與光譜等離子體監測技術的數據結合在一個系統中。所有感測器信號均採用通用控制演算法進行評估，實現對兩種等離子體參數的可靠和穩定的過程控制。

Independent control the ionization degree and reactive gas flow is now possible in reactive pulse and HIPIMS process and opens the door to many new applications in R&D and industry.
在反應式脈衝和HIPIMS製程中，現在可以獨立控制電離度和反應性氣體流量，並為研發和工業中的許多新應用打開了大門。

Advanced Coatings in HIPIMS hybrid MF magnetron sputtering with the aid of EMICON closed loop feedback control 借助EMICON閉環反饋控制，在HIPIMS混合MF磁控濺射中的先進塗層。

Recently lots of requests on advanced coating configuration in HIPIMS magnetron sputtering: higher deposition rate and high coating layer quality are key demands. With HIPIMS magnetron sputtering, to have the highest thin film quality is for sure, however, the slow deposition rate is still a big concern comparing to MF magnetron sputtering. How to combine both advantages (high quality and high deposition rate) and how to perform the optimized coating layer in a reasonable and cost-effective configuration become a hot topic for R&D and industrials.
最近，對HIIMS磁控濺射中的高級鍍膜配置提出了許多要求：更高的沉積速率和高鍍膜層質量是關鍵要求。使用HIPIMS磁控濺射，可以肯定地具有最高的薄膜品質，但是，與MF磁控濺射相比，緩慢的沉積速率仍然是一個大問題。如何兼顧兩者優勢（高品質和高沉積速率），以及如何在合理且具有成本效益的配置中執行優化的塗層，成為研發和工業界的熱門話題。


Magpuls Power supply can switch the output mode either MF or HIPIMS. And a special function to combine both in hybrid output waveform pattern via. a built-in PulsTrain waveform editor in the pulse unit. Recipes can be saved and recalled easily. For remote control, a full control over all parameters (time-settings, arc-settings, operating mode changing) to proceed the real-time online dynamic adjustments and controlling can be achieved via a LAN communication to a PC software which end user can design a special remote-control program running on the remote control PC. An EMICON system is the key technology to govern the film properties and quality. Through EMICON system’s setpoint for a closed loop PID control over the flow rate of MFC, the output voltage of a power supply, or even the pulse frequency of the pulse power supply, it’s very flexible to handle precisely the quality control of deposited layer in mechanical, optical and electrical properties. In the combination with EMICON (plasma emission monitor) online quality control and Magpuls stable output pulse patterned waveform, the plasma impedance can be kept very stable and the film growth has high quality in the best performances. Adding some end point conditions can enhance the power of online quality control in real time mode. Such an advanced coating configuration brings a new era for HIPIMS and MF hybrid coating to create new coating materials and applications.
Magpuls 電源可以切換 MF 或 HIPIMS 輸出模式。並具有特殊功能，可將兩者結合在混合輸出波形模式中。脈衝單元中內置的 PulsTrain 波形編輯器。食譜可以很容易地保存和調用。對於遠端控制，可以通過LAN與PC軟體的通信實現對所有參數（時間設置，弧設置，操作模式更改）的完全控制，以進行即時在線動態調整和控制，最終使用者可以設計一個特殊的遠端控制程式運行在遠端控制PC上。EMICON系統是控制薄膜特性和品質的關鍵技術。通過EMICON系統的閉環PID設定值，對MFC的流速、電源的輸出電壓，甚至脈衝電源的脈衝頻率進行控制，可以非常靈活地在機械、光學和電氣性能方面精確地處理沉積層的品質控制。結合EMICON（等離子體發射監測器）在線品質控制和Magpuls穩定輸出脈衝圖案波形，等離子體阻抗可以保持非常穩定，薄膜生長品質高，性能最佳。添加一些端點條件可以增強即時模式下的在線品質控制能力。這種先進的塗層配置為HIPIMS和MF混合塗層帶來了一個新時代，以創造新的塗層材料和應用。

References:
1. Magpuls

2. Plasus

3. Applied Optivac Technology, Inc.

HIPIMS hybrid/super-imposed MF for a perfect magnetron sputtering process HIPIMS混合/疊加MF用於完美的磁控濺射工藝。

Power supply is very important in magnetron sputtering processes and applications. The latest advanced power supply from Magpuls is able to perform MF mode or HIPIMS mode stand-alone or combine both output waveform patterns via. hybrid (a waveform editor built in controlled by a linux chip) in one pulse unit or super-imposed MF pulse unit and the other HIPIMS unit for the best quality coating purpose.
電源在磁控濺射工藝和應用中非常重要。Magpuls 最新的先進電源能夠獨立執行 MF 模式或 HIPIMS 模式，或通過以下方式組合兩種輸出波形模式。混合（由 linux 晶片控制的內置波形編輯器）在一個脈衝單元或疊加的 MF 脈衝單元和另一個 HIPIMS 單元中，以實現最佳品質的塗層目的。

Here is an example of magnetron sputtering coating with MF hybrid HIPIMS. In this configuration, only one pulse is able to perform both MF and HIPIMS output waveform patterns designed via. PulsTrain waveform editor inside Magpuls pulse unit. The purpose is to save the money in the investment of coating tool.
這是使用 MF 混合 HIPIMS 進行磁控濺射鍍膜的示例。在這種配置中，只有一個脈衝能夠同時執行 MF 和 HIPIMS 輸出波形模式。Magpuls 脈衝單元內的 PulsTrain 波形編輯器。目的是節省塗裝工具的投資資金。

The other example is to combine MF pulse unit with the other HIPIMS pulse unit in the super-imposed configuration. In this configuration, the cost is much higher.
另一個例子是將MF脈衝單元與其他HIPIMS脈衝單元組合在一起，形成疊加配置。在這種配置中，成本要高得多。

In both hybrid and super-imposed configurations, the bias and related pulse units must be well-synchronized to obtain the best coating performance.
在混合和疊加配置中，偏置和相關脈衝單元必須保持良好同步，以獲得最佳鍍膜性能。

What is the purpose of using remote LAN control via EMICON RC DLL? (使用LAN遠端控制的目的)

主要目的是從中央控制室(很遠處，在無塵室外頭)要掌握生產線上使用的每一個EMICON工作站(個別IP)的狀況，以及從中央控製室對各別的EMICON線上工作站下達對應製程的製程參數(RECIPE)。例如: 對大型設備而言，特別是多腔體(multi-chamber)的生產線，線上有很多套EMICON工作站。

單一機台(設定localhost)使用的目的，在於把EMICON隱藏起來，不讓別人知道他們使用的是EMICON。
另一個目的在於有效整合自己的程式系統，或是製作他們自己要用的統計資料來做線上的用途。

Homogeneity & Uniformity

Definitions

Usually the definitions of two important quality factors – homogeneity and uniformity – are easily mixed up in a deposition process no matter which coating technologies are involved.  Note that many articles, papers or technical notes made the same confusion.  So, the definitions must be clear.

Homogeneity generally considers a very local spot area and measure/check the layer properties along the direction of the layer grown.

Uniformity considers the differences or tolerances among several measured data along one axis or in a big XY-plane area.

PEM system normally takes the responsibility of layer’s homogeneity control.

Uniformity can be achieved if the process chamber has a good layout or configuration for reactive plasma process.

 

Homogeneity

To achieve a good homogeneity layer, PEM system was introduced to reactive plasma processês to ensure the composition fraction (or alloy fraction) in each compound or molecules formed by the reactive plasma process is nearly constant.

In general, a PEM system is able to handle magnetron reactive sputtering in a distance range 500mm-600mm along the long axis of magnetron for a good PID closed loop control under the operating pressure range: approx. 0.8mTorr~10mTorr. In this example, a SiOx layer is grown by a dual magnetron sputtering sources with a process control by a PEM system.  PEM system varies the oxygen flow quickly to fit the setpoint by a fast response PID calculation to give a feedback voltage to control the oxygen flow rate. A good PID closed loop control can bring the alloy fraction factor x in each grown SiOx layer has an almost constant x value in different growth time, for example:  T1, T2, T3 and T4.
This is what PEM system contributes to get a high homogeneity layer.

Uniformity

Uniformity is a very important factor to be concerned and it’s very complicated because there are many factors that can influence it.  Generally, process chamber’s configuration is most critical to get a good uniformity of the grown layer.

This example has 3 measuring points over the width 1300mm of the PET film to compare the thickness, refractive index and other data corresponding to the uniformity in 3 locations in the same XY-plane on the surface of PET film.

The factors often influencing the uniformity include:

-Pumping: if the pumping ports can not provide good pumping speed and the gas distribution inside the process chamber is not good, the uniformity would be influenced.
-Gas piping: if the gas piping delivering the reactive gas can not deliver the gas into the reactive plasma zone in the shortest time evenly, the uniformity would be influenced.
-Magnetrons: if magnetic constraint for electrons is not uniform, the uniformity would be influenced.

 

 

What’s the difference between the intensity listed in the database and the actual measurement?

This is an interesting question asked often while one touches and senses the plasma by optical emission spectrometry.

 

The radiation we are measuring with the EmiCon OES system is due to a two-step process in the plasma:

1. Ground state atoms are excited by electron collisions in higher electronic levels. The density of the excited atoms in a specific electronic level depends on the energy gap between the ground state (0 eV) and the higher electronic level and the electron temperature (i.e. electron energy distribution function EEDF, often Maxwelliam). The larger the gap the less is the density of the atom in this specific energy level.

2. From the higher electronic level the atom is decaying by spontaneous emission to some lower electronic level. This is the radiation we are measuring. The intensity given in the SpecLine database is the probability that the atom in the specific higher electron level will decay into the given lower electronic level.

This means for the Hg spectrum:
A.The lines at 404 nm, 435 nm and 546 nm are all decaying from the electronic level 7s2S with energy 7.73 eV. These there lines show an intensity distribution as given by the intensity values of the SpecLine database.
B. The line at 365 nm is decaying form the electronic level 6p2P° with energy 8.85 eV and the line 579 nm is decaying from the electronic level 6p1P° with energy 8.84 eV. Allthough these lines have a higher probability to decay than the lines form the 7s2S level, the denstiy of atoms in the 6p levels is much smaller due to the higher energy of the excited level (8.85 eV and 7.73 eV for the 7s level).

In general, the intensity of a line is ruled first by the excitation process (i.e. the energy of the higher electronic level) and second by the probabilty of decaying form the higher level to a lower level.

The remaining differences in the intensities of the lines is due to the sensitivity distribution of the EmiCon system, i.e. the system is most sensitive between 450 and 550 nm and less sensitive below 400 nm.

~~~ supported by Dr. Thomas Schütte of PLASUS ~~~

Good coating protection by a honey comb protection device in front of a quartz collimator lens (PECVD process)

On a PECVD process to coat SiO2 layer with SiH4 precursor reacted with oxygen, a quartz collimator with a honey comb protection device in the front to be mounted onto a KF25 flange.

setup of the collimator onto a KF25 flange

Continue reading “Good coating protection by a honey comb protection device in front of a quartz collimator lens (PECVD process)”